Semiconductor Engineering

A Memory Device With MoS

A technical paper titled “Low-Power Charge Trap Flash Memory with MoS 2 Channel for High-Density In-Memory Computing” was published by researchers at Kyungpook National University, Sungkyunkwan ...
EurekAlert!

Dipole‑driven charge trapping in monolayer janus mosse for ultrathin nonvolatile memory devices

Janus MoSSe-based floating-gate memory exhibits ultrafast charge-trapping dynamics and stable charge retention exceeding 10 8 s under low-voltage operation. The intrinsic out-of-plane dipole moment in ...
Nanowerk

Janus MoSSe monolayer achieves ultrafast charge trapping in 2D flash memory

The study was led by Professor Min Sup Choi of Chungnam National University and Professor Hyun Ho Kim of Gwangju Institute of Science and Technology, with contributions from researchers at Kumoh ...
Electronic Design

3D NAND Flash Memory Continues Its Climb

Check out our coverage of the 2023 Flash Memory Summit. 3D NAND chips are the skyscrapers of the semiconductor industry, linking together layers of flash memory with short vertical interconnects that ...