As the need to scale transistors to ever-smaller sizes continues to press on technology designers, the impact of parasitic resistance and capacitance can approach or even outpace other aspects of ...
With continuing finFET device process scaling, micro loading control becomes increasingly important due to its significant impact on yield and device performance [1-2]. Micro-loading occurs when the ...
The gate-all-around (GAA) semiconductor manufacturing process, also known as gate-all-around field-effect transistor (GAA-FET) technology, defies the performance limitations of FinFET by reducing the ...
Rita was a Managing Editor at Android Police. Once upon a time, she was a pharmacist as well. Her love story with Android started in 2009 and has been going stronger with every update, device, tip, ...
Samsung Electronics has announced that its development of the 3 nm gate-all-around (GAA) process called 3GAE is on track and that it has made available version 0.1 of its process design kit (PDK) in ...
GLOBALFOUNDRIES recently announced their upcoming 7nm FinFET manufacturing process which is expected to go into production in early 2018. According to the GLOBALFOUNDRIES, their new 7nm FinFET ...
The demand for smartphones and tablets with better performance and longer battery life has been driving the industry to come up with chips that are faster, smaller and use less power. To remain on ...
Samsung today announced that it's begun mass producing 14nm LPP (Low-Power Plus) logic chips based on its three-dimensional (3D) FinFET process. The South Korean chip maker also confirmed that ...
IC Compiler II and Design Compiler Graphical provide a complete digital implementation flow delivering optimized power, performance, area, and full via pillar support StarRC, PrimeTime, NanoTime, and ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results