New Monolithic GaN converters from STMicroelectronics help boost energy savings in a wide range of applications.

Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...

Properties of wide-bandgap materials, with a focus on SiC. How a bridgeless totem-pole topology can help cut losses. A breakdown of the half-bridge inverter topology The efficiency of power-conversion ...

The BSP75G intelliFET is a 60-V, 550-mΩ N-channel device with full self protection against overtemperature, overcurrent, overvoltage, and electrostatic discharge. It integrates a configurable ...

The chipmaker will shed light on a series of changes it's making to transistors that ideally will keep a lid on the growing problem of power consumption. Michael Kanellos is editor at large at CNET ...

TORRANCE, Calif., March 13, 2025 (GLOBE NEWSWIRE) -- Navitas Semiconductor (NVTS) (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride ...

The theoretical advantages of GaN-based power transistors are now being realized in mainstream system designs. Power supplies for data centers and telecom switching racks are two application areas ...

A load switch is an electronic switch. It works like a relay to power supply rails in systems, but it has no moving parts. Load switches are increasingly found in today’s portable electronic devices, ...

Fast switching: the Hybrid Photonics Labs at Skoltech where the new optical transistor was created. (Courtesy: Skoltech) A new optical transistor has been designed by researchers in Russia, ...